Enhancing the Relative Sensitivity of V, V and V Based Luminescent Thermometer by the Optimization of the Stoichiometry of YAlGaO Nanocrystals.

In this work the influence of the Ga concentration on the luminescent properties and the abilities of the YAlGaO: V nanocrystals to noncontact temperature sensing were investigated. It was shown that the increase of the Ga amount enables enhancement of V emission intensity in respect to the V and V and thus modify the color of emission. The introduction of Ga ions provides the appearance of the crystallographic sites, suitable for V occupation. Consequently, the increase of V amount facilitates V → V interionic energy transfer throughout the shortening of the distance between interacting ions. The opposite thermal dependence of V and V emission intensities enables to create the bandshape luminescent thermometr of the highest relative sensitivity of V-based luminescent thermometers reported up to date (S, 2.64%/°C, for YAlGaO at 0 °C). An approach of tuning the performance of YAlGaO: V nanocrystals to luminescent temperature sensing, including the spectral response, maximal relative sensitivity and usable temperature range, by the Ga doping was presented and discussed.