AI Article Synopsis
- - Researchers have developed an optical method to control charge density in two-dimensional materials, specifically using transition metal dichalcogenide heterobilayers (WSe/MoSe) with type II band alignment.
- - By adjusting the optical excitation density above a critical threshold known as the Mott threshold, they can induce a phase transition from interlayer excitons to separated electron and hole plasmas localized in different layers.
- - This technique allows for sustaining high carrier densities (up to 4 × 10^10 cm) using both pulsed and continuous wave light, paving the way for new ways to manipulate electronic phases in 2D materials.
Article Abstract
Controlling charge density in two-dimensional (2D) materials is a powerful approach for engineering new electronic phases and properties. This control is traditionally realized by electrostatic gating. Here, we report an optical approach for generation of high carrier densities using transition metal dichalcogenide heterobilayers, WSe/MoSe, with type II band alignment. By tuning the optical excitation density above the Mott threshold, we realize the phase transition from interlayer excitons to charge-separated electron/hole plasmas, where photoexcited electrons and holes are localized to individual layers. High carrier densities up to 4 × 10 cm can be sustained under both pulsed and continuous wave excitation conditions. These findings open the door to optical control of electronic phases in 2D heterobilayers.
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Source |
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6744266 | PMC |
| http://dx.doi.org/10.1126/sciadv.aax0145 | DOI Listing |
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