Ferroelectric (FE) distortions in a metallic material were believed to be experimentally inaccessible because itinerant electrons would screen the long-range Coulomb interactions that favor a polar structure. It has been suggested by Anderson and Blount [P. W. Anderson, E. I. Blount, 14, 217-219 (1965)] that a transition from paraelectric phase to FE phase is possible for a metal if, in the paraelectric phase, the electrons at the Fermi level are decoupled from the soft transverse optical phonons, which lead to ferroelectricity. Here, using Raman spectroscopy combined with magnetotransport measurements on a recently discovered FE metal LiOsO, we demonstrate active interplay of itinerant electrons and the FE order: Itinerant electrons cause strong renormalization of the FE order parameter, leading to a more gradual transition in LiOsO than typical insulating FEs. In return, the FE order enhances the anisotropy of charge transport between parallel and perpendicular to the polarization direction. The temperature-dependent evolution of Raman active in-plane E phonon, which strongly couples to the polar-active out-of-the-plane A phonon mode in the high-temperature paraelectric state, exhibits a deviation in Raman shift from the expectation of the pseudospin-phonon model that is widely used to model many insulating FEs. The Curie-Weiss temperature (θ ≈ 97 K) obtained from the optical susceptibility is substantially lower than , suggesting a strong suppression of FE fluctuations. Both line width and Fano line shape of E Raman mode exhibit a strong electron-phonon coupling in the high-temperature paraelectric phase, which disappears in the FE phase, challenging Anderson/Blount's proposal for the formation of FE metals.
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http://dx.doi.org/10.1073/pnas.1908956116 | DOI Listing |
Nat Commun
December 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
Extending ferroelectric materials to two-dimensional limit provides versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices.
View Article and Find Full Text PDFNat Commun
November 2024
Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, USA.
Nat Commun
November 2024
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Symmetry invariants of a group specify the classes of quasiparticles, namely the classes of projective irreducible co-representations in systems having that symmetry. More symmetry invariants exist in discrete point groups than the full rotation group O(3), leading to new quasiparticles restricted to lattices that do not have any counterpart in a vacuum. We focus on the fermionic quasiparticle excitations under "spin-space group" symmetries, applicable to materials where long-range magnetic order and itinerant electrons coexist.
View Article and Find Full Text PDFJ Phys Condens Matter
November 2024
Department of Physics, Indian Institute of Technology, Kanpur 208016, India.
Hall effects, including anomalous and topological types, in correlated ferromagnetic oxides provide an intriguing framework to investigate emergent phenomena arising from the interaction between spin-orbit coupling and magnetic fields. SrRuOis a widely studied itinerant ferromagnetic system with intriguing electronic and magnetic characteristics. The electronic transport of SrRuOis highly susceptible to the defects (O/Ru vacancy, chemical doping, ion implantation), and interfacial strain.
View Article and Find Full Text PDFAdv Mater
January 2025
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
2D van der Waals (vdW) magnets, which extend to the monolayer (ML) limit, are rapidly gaining prominence in logic applications for low-power electronics. To improve the performance of spintronic devices, such as vdW magnetic tunnel junctions, a large effective spin polarization of valence electrons is highly desired. Despite its considerable significance, direct probe of spin polarization in these 2D magnets has not been extensively explored.
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