We show that subwavelength Si-rich nitride waveguides efficiently sustain high-speed transmissions at 2 μm. We report the transmission of a 10 Gbit/s signal over 3.5 cm with negligible power penalty. Parametric conversion in the pulsed pump regime is also demonstrated using the same waveguide structure with an efficiency as high as -18 .
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http://dx.doi.org/10.1364/AO.58.005165 | DOI Listing |
ACS Appl Mater Interfaces
July 2024
Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology, Winterbergstrasse 28, D-01277 Dresden, Germany.
Group III-nitride semiconductors have been subject of intensive research, resulting in the maturing of the material system and adoption of III-nitrides in modern optoelectronics and power electronic devices. Defined film polarity is an important aspect of III-nitride epitaxy as the polarity affects the design of electronic devices. Magnetron sputtering is a novel approach for cost-effective epitaxy of III-nitrides nearing the technological maturity needed for device production; therefore, control of film polarity is an important technological milestone.
View Article and Find Full Text PDFWe demonstrate the linear and nonlinear characterization of a plasma-enhanced chemical vapor deposited silicon-rich silicon nitride (SRSN) racetrack ring resonator for on-chip applications within the telecommunication wavelength range. The SRSN waveguide parameters are optimized by employing the refractive index profile measured by ellipsometry to achieve flat dispersion in the telecom band. Furthermore, we measure the thermo-optic coefficient of the micro-resonator by analyzing the temperature-dependent transmission spectra and assess it to be 3.
View Article and Find Full Text PDFACS Omega
August 2023
Belarusian State University, Kurchatov Str. 5, 220045 Minsk, Belarus.
Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH/N = 1.875 and SiH/NO = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH/N/NO = 3:2:2) was not found.
View Article and Find Full Text PDFWe demonstrate a detailed theoretical analysis describing the generation of an electro-optic comb (EOC) in the near-IR range through discrete phase and amplitude modulation driven by radio frequency (RF) signal generators. Furthermore, the generated EOC spectra suffer nonlinear spectral broadening while propagating through a hybrid Si-rich nitride (SRN) waveguide structure integrated with two-dimensional (2D) layered graphene oxide (GO) films. We perform a detailed analysis to investigate the influence of GO layers, pump wavelength detuning, and other waveguide parameters on the evolution of comb spectra propagating through the hybrid waveguide structure.
View Article and Find Full Text PDFSci Rep
September 2022
Optoelectronics Research Centre, Highfield Campus, University of Southampton, Southampton, SO17 1BJ, UK.
We propose and numerically demonstrate a versatile strategy that allows designing highly efficient dual-level grating couplers in different silicon nitride-based photonic platforms. The proposed technique, which can generally be applied to an arbitrary silicon nitride film thickness, is based on the simultaneous optimization of two grating coupler levels to obtain high directionality and grating-fibre mode matching at the same time. This is achieved thanks to the use of two different linear apodizations, with opposite signs, applied to the two grating levels, whose design parameters are determined by using a particle swarm optimization method.
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