AI Article Synopsis

  • Spin-forbidden dark excitons in tungsten-based TMDCs have long lifetimes and unique spin textures, making them a focus of research in material science.
  • Researchers demonstrated the ability to control these dark excitons by combining them with free electrons or holes, creating what are known as dark trions.
  • The study revealed distinct differences in photon valley polarization due to the intervalley scattering mechanisms of electrons and holes, and highlighted the ability to tune the lifetime of dark trions by adjusting gate voltage, opening new avenues for applications in excitonic optoelectronics and valleytronics.

Article Abstract

Spin-forbidden intravalley dark excitons in tungsten-based transition-metal dichalcogenides (TMDCs), because of their unique spin texture and long lifetime, have attracted intense research interest. Here, we show that we can control the dark exciton electrostatically by dressing it with one free electron or free hole, forming the dark trions. The existence of the dark trions is suggested by the unique magneto-photoluminescence spectroscopy pattern of the boron nitride (BN)-encapsulated monolayer WSe device at low temperature. The unambiguous evidence of the dark trions is further obtained by directly resolving the radiation pattern of the dark trions through back focal plane imaging. The dark trions possess a binding energy of ∼15 meV, and they inherit the long lifetime and large -factor from the dark exciton. Interestingly, under the out-of-plane magnetic field, dressing the dark exciton with one free electron or hole results in distinctively different valley polarization of the emitted photon, as a result of the different intervalley scattering mechanism for the electron and hole. Finally, the lifetime of the positive dark trion can be further tuned from ∼50 ps to ∼215 ps by controlling the gate voltage. The gate-tunable dark trions usher in new opportunities for excitonic optoelectronics and valleytronics.

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Source
http://dx.doi.org/10.1021/acs.nanolett.9b02132DOI Listing

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