Many envisioned applications of semiconductor nanocrystals (NCs), such as thermoelectric generators and transparent conductors, require metallic (nonactivated) charge transport across an NC network. Although encouraging signs of metallic or near-metallic transport have been reported, a thorough demonstration of nonzero conductivity, σ, in the 0 K limit has been elusive. Here, we examine the temperature dependence of σ of ZnO NC networks. Attaining both higher σ and lower temperature than in previous studies of ZnO NCs ( as low as 50 mK), we observe a clear transition from the variable-range hopping regime to the metallic regime. The critical point of the transition is distinctly marked by an unusual power law close to σ ∝ . We analyze the critical conductivity data within a quantum critical scaling framework and estimate the metal-insulator transition (MIT) criterion in terms of the free electron density, , and interparticle contact radius, ρ.
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http://dx.doi.org/10.1126/sciadv.aaw1462 | DOI Listing |
Nano Lett
January 2025
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.
Controlling the Mott transition through strain engineering is crucial for advancing the development of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of microscopic distortions on the local Mott transition. Here, using a synchrotron-based scanning X-ray nanoprobe, we studied the real-space structural heterogeneity during the structural phase transition in a VO thin film.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
Bioinspired sensory systems based on spike neural networks have received considerable attention in resolving high energy consumption and limited bandwidth in current sensory systems. To efficiently produce spike signals upon exposure to external stimuli, compact neuron devices are required for signal detection and their encoding into spikes in a single device. Herein, it is demonstrated that Mott oscillative spike neurons can integrate sensing and ceaseless spike generation in a compact form, which emulates the process of evoking photothermal sensing in the features of biological photothermal nociceptors.
View Article and Find Full Text PDFMicrosyst Nanoeng
December 2024
Micro- and Nanosystems, Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, 3001, Leuven, Belgium.
Cr-doped VO thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped VO thin film an appealing piezoresistive material. To investigate the piezoresistivity of Cr-doped VO thin film for implementation in MEMS sensor applications, the resistance change of differently orientated Cr-doped VO thin film piezoresistors with external strain change was measured.
View Article and Find Full Text PDFNano Lett
December 2024
Department of Physics, Emory University, Atlanta, Georgia 30322, United States.
SrIrO is a metallic complex oxide with unusual electronic and magnetic properties believed to originate from electron correlations due to its proximity to the Mott metal-insulator transition. However, the nature of its electronic state and the mechanism of metallic conduction remain poorly understood. We demonstrate that the shot noise produced by nanoscale SrIrO junctions is strongly suppressed, inconsistent with diffusive quasiparticle transport.
View Article and Find Full Text PDFNanophotonics
September 2024
Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), 34126, Daejeon, Republic of Korea.
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