Ti-doped ZnO thin films were obtained with the aim of tailoring ZnO film bioadhesiveness and making the optoelectronic properties of ZnO materials transferable to biological environments. The films were prepared on silicon substrates by sol-gel spin-coating and subsequent annealing. A Ti-O segregation limits the ZnO crystallite growth and creates a buffer out-layer. Consequently, the Ti-doped ZnO presents slightly increased resistivity, which remains in the order of 10 Ω·cm. The strong biochemical interference of Zn ions released from pure ZnO surfaces was evidenced by culturing with and without the Zn coupling agent clioquinol. The Ti-doped ZnO surfaces showed a considerable increase of bacterial viability with respect to pure ZnO. Cell adhesion was assayed with human mesenchymal stem cells (hMSCs). Although hMSCs find difficulties to adhere to the pure ZnO surface, they progressively expand on the surface of ZnO when the Ti doping is increased. A preliminary microdevice has been built on the Si substrate with a ZnO film doped with 5% Ti. A one-dimensional micropattern with a zigzag structure shows the preference of hMSCs for adhesion on Ti-doped ZnO with respect to Si. The induced contrast of surface tension further induces a cell polarization effect on hMSCs. It is suggested that the presence of Ti-O covalent bonding on the doped surfaces provides a much more stable ground for bioadhesion. Such fouling behavior suggests an influence of Ti doping on film bioadhesiveness and sets the starting point for the selection of optimal materials for implantable optoelectronic devices.
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http://dx.doi.org/10.1021/acsomega.9b00646 | DOI Listing |
Toxics
December 2022
Department of Physics, Faculty of Liberal Arts and Science, Kasetsart University Kamphaeng Saen Campus, Kamphaeng Saen, Nakhon Pathom 73140, Thailand.
ZnO and Ti-doped ZnO (Ti-ZnO) nanoparticles were synthesized using rapid combustion. The morphology of ZnO and Ti-ZnO featured nanoparticles within cluster-like structures. The ZnO and Ti-ZnO structures exhibited similar hexagonal wurtzite structures and crystal sizes.
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September 2022
National Laboratory Astana, Nazarbayev University, Nur-Sultan 010000, Kazakhstan.
In this study, Ti-doped ZnO films with flower-rod-like nanostructures were synthesized by the successive ionic layer adsorption and reaction (SILAR) method for enhanced NO gas-sensing applications. The stoichiometric ratio of Ti in the host ZnO lattice was confirmed by atomic absorption and energy-dispersive X-ray spectroscopies. All of the synthesized films exhibited a pure wurtzite hexagonal structure that seemed to deteriorate at high Ti doping contents as was manifested by the measured X-ray diffraction patterns.
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January 2022
Department of Materials Science and Engineering, Technion─Israel Institute of Technology, Haifa 32000, Israel.
ZnO is a promising thermoelectric (TE) material for high-temperature applications; however, its TE performance is limited by strong coupling between electrical and thermal transport. In this study, we synthesized Al and Ti co-doped ZnO by a solid-state reaction and air sintering at 1500 °C and analyzed the microstructure to establish its correlation with TE properties. The TE transport properties were measured between room temperature and 800 °C, and electronic properties were calculated from first principles calculations.
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October 2020
Division of Materials Science, Graduate School of Science and Technology, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
Herein, enhancements in thermoelectric (TE) performance, both the power factor (PF) and thermal stability, are exhibited by sandwiching HfO and TiO layers onto atomic layer deposited-ZnO thin films. High-temperature TE measurements from 300 to 450 K revealed an almost two-fold improvement in electrical conductivity for TiO/ZnO (TZO) samples, primarily owing to an increase in carrier concentration by Ti doping. On the other hand, HfO/ZnO (HZO) achieved the highest PF values owing to maintaining Seebeck coefficients comparable to pure ZnO.
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May 2020
Institut Photovoltaı̈que d'Ile-de-France (IPVF), 18 Boulevard Thomas Gobert, 91120 Palaiseau, France.
In the quest for the replacement of indium tin oxide (ITO), Ti-doped zinc oxide (TZO) films have been synthesized by atomic layer deposition (ALD) and applied as an n-type transparent conductive oxide (TCO). TZO thin films were obtained from titanium (IV) -propoxide (TTIP), diethyl zinc, and water by introducing TiO growth cycle in a ZnO matrix. Process parameters such as the order of precursor introduction, the cycle ratio, and the film thickness were optimized.
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