AI Article Synopsis
- The study uses synchrotron-based hard X-ray photoelectron spectroscopy to analyze the chemical and electronic changes in MoO thin films during annealing from room temperature to 310 °C.
- Color-coded 2D intensity maps reveal the impact of temperature on the Mo 3d and O 1s spectra, indicating significant structural changes, such as the reduction of MoO and the formation of metallic Mo.
- Findings suggest a direct correlation between annealing temperature and modifications in the material’s properties, indicating a potential method for customizing MoO thin-film characteristics for various applications.
Article Abstract
The chemical and electronic structure of MoO thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C. Color-coded 2D intensity maps of the Mo 3d and O 1s and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O 1s spectra indicate the reduction of MoO. At moderate temperatures (120-200 °C), we find spectral evidence for the formation of Mo and at higher temperatures (>165 °C) also of Mo states. These states can be related to the spectral intensity above the VBM attributed to O vacancy induced gap states caused by partial filling of initially unoccupied Mo 4d-derived states. A clear relation between annealing temperature and the induced changes in the chemical and electronic structure suggests this approach as a route for deliberate tuning of MoO thin-film properties.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648274 | PMC |
| http://dx.doi.org/10.1021/acsomega.9b01027 | DOI Listing |
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