AI Article Synopsis

  • - The study focuses on how strain relaxation occurs in GaSb films grown on GaAs(111)A using thin layers of InAs as interlayers.
  • - When 1 or 2 monolayers (ML) of InAs are used, they create a layer that causes tensile strain in the GaSb films, while thicker InAs layers (3 ML or more) lead to compressive strain.
  • - At thicknesses above 5 ML, the InAs layer is less effective at relieving strain, resulting in residual strain in GaSb films and contributing to increased peak width in X-ray rocking curves, indicating elastic deformation.

Article Abstract

We have systematically studied the strain relaxation processes in GaSb heteroepitaxy on GaAs(111)A using thin InAs interlayers. The growth with 1 ML- and 2 ML-InAs leads to formation of an InAsSb-like layer, which induces tensile strain in GaSb films, whereas the GaSb films grown with thicker InAs layers (≥3 ML) are under compressive strain. As the InAs thickness is increased above 5 ML, the insertion of the InAs layer becomes less effective in the strain relaxation, leaving residual strain in GaSb films. This leads to the elastic deformation of the GaSb lattice, giving rise to the increase in the peak width of X-ray rocking curves.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643550PMC
http://dx.doi.org/10.1021/acsomega.8b02359DOI Listing

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