AI Article Synopsis
- The ζ potential measurement of Ga-face and N-face gallium nitride indicates that both have negative ζ potential from pH 5.5 to 9, with the Ga-face showing an isoelectric point at pH 5.5.
- The N-face exhibits a more negative ζ potential due to a higher concentration of adsorbed oxygen.
- Using an H-terminated diamond seed solution at pH 8 is optimal for creating a monolayer of diamond nanoparticles on the GaN surface, leading to fully coalesced diamond films without needing a low thermal conduction seeding layer like silicon nitride.
Article Abstract
The measurement of ζ potential of Ga-face and N-face gallium nitride has been carried out as a function of pH. Both of the faces show negative ζ potential in the pH range 5.5-9. The Ga-face has an isoelectric point at pH 5.5. The N-face shows a more negative ζ potential due to larger concentration of adsorbed oxygen. The ζ potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self-assembly of a monolayer of diamond nanoparticles on the GaN surface. The subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films, confirming a seeding density in excess of 10 cm. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.
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Source |
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645065 | PMC |
| http://dx.doi.org/10.1021/acsomega.7b01069 | DOI Listing |
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