A series of heavily Fe-doped LiNbO (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO crystal reached 3.30 × 10 Ω cm and 1.46 × 10 Ω cm at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO on a p-type Si substrate using the pulsed laser deposition. The current-voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics.
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| http://dx.doi.org/10.3390/ma12172659 | DOI Listing |
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