Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials have recently attracted great interest because of their tantalising prospects for a broad range of applications including electronics, optoelectronics, and energy storage. Unlike bulk materials, the device performance of atomically thin 2D materials is determined by the interface, thickness and defects. Plasma processing is very effective for diverse modifications of nanoscale 2D TMDC materials, owing to its uniquely controllable, effective processes and energy efficiency. Herein, we critically discuss selected recent advances in plasma modification of 2D TMDC materials and their optical and electronic (including optoelectronic) properties of relevance to applications in hydrogen production, gas sensing and energy storage devices. Challenges and future research opportunities in the relevant research field are presented. This review contributes to directing future advances of plasma processing of TMDC materials for targeted applications.
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http://dx.doi.org/10.1039/c9nr05522c | DOI Listing |
Sci Rep
January 2025
College of Integrative Studies, Abdullah Al Salem University, Khaldiya, Kuwait.
In this study, we explore the photovoltaic performance of an innovative high efficiency heterostructure utilizing the quaternary semiconductor CuFeSnSe (CFTSe). This material features a kesterite symmetrical structure and is distinguished by its non-toxic nature and abundant presence in the earth's crust. Utilizing the SCAPS simulator, we explore various electrical specifications such as short circuit current (J), open circuit voltage (V), the fill factor (FF), and power conversion efficiency (PCE) were explored at a large range of thicknesses, and the acceptor carrier concentration doping (N).
View Article and Find Full Text PDFAdv Mater
December 2024
School of Electronic Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructure, Nanjing University, Nanjing, 210023, China.
2D transition-metal dichalcogenide (TMDC) semiconductors represent the most promising channel materials for post-silicon microelectronics due to their unique structure and electronic properties. However, it remains challenging to synthesize wide-bandgap TMDCs monolayers featuring large areas and high performance simultaneously. Herein, highly oriented WS monolayers are reproducibly synthesized through a templated growth strategy on vicinal C/A-plane sapphire wafers.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2024
Physics Department, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures [Ministry of Education (MOE)], Fudan University, Shanghai 200433, China.
The hybrid heterostructures formed between two-dimensional (2D) materials and organic molecules have gained great interest for their potential applications in advanced photonic and optoelectronic devices, such as solar cells and biosensors. Characterizing the interfacial structure and dynamic properties at the molecular level is essential for realizing such applications. Here, we report a time-resolved sum-frequency generation (TR-SFG) approach to investigate the hybrid structure of polymethyl methacrylate (PMMA) molecules and 2D transition metal dichalcogenides (TMDCs).
View Article and Find Full Text PDFNanophotonics
April 2024
Department of Physics, Korea University, Seoul, 02841, South Korea.
Guided exciton-polariton modes naturally exist in bare transition metal dichalcogenide (TMDC) layers due to self-hybridization between excitons and photons. However, these guided polariton modes exhibit a limited propagation distance owing to the substantial exciton absorption within the material. Here, we investigated the impact of hexagonal boron nitride (hBN) layers on guided exciton-polariton modes in WS multilayers.
View Article and Find Full Text PDFNanoscale
December 2024
Departamento de Física Aplicada, Centro de Investigación y de Estudios Avanzados, Unidad Mérida, km 6 Antigua carretera a Progreso, Apdo. Postal 73, Cordemex 97310, Mérida, Yuc., Mexico.
This study expands the JAM notation to systematically explore stacking configurations of transition metal dichalcogenide (TMDC) multilayers, covering both conventional and Janus structures. We extended JAM to represent four TMDC types: 1H, 1T, Janus 1H, and Janus 1T, adding characters to describe these structures. Additionally, we updated the JAM algorithm to generate stacking configurations and produce VASP-compatible POSCAR files.
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