The continuous presence of toxic elements in the aquatic environments around mine tailings occurs due to bioleaching or chemical extraction promoted by the mining operations. Biogenic passivation treatment of tailings dams can be a new environment-friendly technique to inhibit the solubility of heavy metals. In spite of current bioleaching researches, we tried to minimize the mobility of the trace elements in the laboratory scale through the formation of a passivation layer in the presence of a mixed culture of Acidithiobacillus ferrooxidans and Acidithiobacillus thiooxidans. The X-ray diffraction (XRD) and scanning electron microscope (SEM) represented the jarosite generation as an inhibitory layer on the mineral surfaces of the tested materials. More detailed observations on electron probe micro-analyzer (EPMA) showed the co-precipitation of metals with the passivation layer. Thereby, the passivation layer demonstrates potential in elements immobilization which, in turn, can be optimized in the natural systems. Our working hypothesis was to exploit and optimize the formation of the passivation layer to maximize the immobilization of heavy metals (e.g., Cu, Cr). The optimization process of bioleaching experiments using indigenous bacteria caused a reduced solubility for Cu (from around 20% to 4.5%) and Cr (from around 30% to 10.6%) and the formation of 6.5 gr passivation layer. The analyses finally represented the high efficiency of the passivation technique to minimize metals bioleaching in comparison to earlier studies.
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http://dx.doi.org/10.1016/j.ecoenv.2019.109443 | DOI Listing |
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January 2025
Anhui Soltrend New Energy Technology Co., Ltd, Lujiang County, Hefei, 230000, China.
Dopant-free passivating contact crystalline silicon solar cells hold the potential of higher efficiency and cost down. In the hole-transport terminal, one still faces the challenge of trade-off between efficiency and stability. In this work, a H-AlO/NiO/Ni stacked hole-transport layer is proposed, where the H-AlO standing for H-rich AlO film can effectively reduce the interfacial defects and the high work function Ni metal results in a low contact resistance of 47.
View Article and Find Full Text PDFChemSusChem
January 2025
South China Agricultural University, College of Materials and Energy, 483 Wushan Road, 510642, Guangzhou, CHINA.
Hole transport layer (HTL)-free carbon-based perovskite solar cells (C-PSCs) own outstanding potential for commercial applications due to their attractive advantages of low cost and superior stability. However, the abundant defects and mismatched energy levels at the interface of the perovskite/carbon electrode severely limit the device efficiency and stability. Constructing a 2D layer on the surface of 3D perovskite films to form 2D/3D heterojunctions has been demonstrated to be an effective method of passivating surface defects and optimizing the energy level alignment in almost all kinds of PSCs.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Centre for Organic Photonics & Electronics, School of Chemistry and Molecular Biosciences, The University of Queensland, Brisbane, Queensland 4072, Australia.
The power conversion efficiency (PCE) of perovskite solar cells is sensitive to their method of fabrication as well as the combination of materials in the perovskite layer. Air knife-assisted blade coating enables good quality perovskite films to be formed but the device efficiencies still tend to lag behind those fabricated using spin-coated perovskite layers. Herein we report the use of three 2,3,4,5,6-pentafluorophenylethylammonium halides (FEAX, where X = I, Br or Cl) as additives in nitrogen knife-assisted blade-coated methylammonium lead iodide (MAPbI) perovskite solar cells.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Anhui Huasun Energy Company, Limited, Xuancheng 242000, China.
A rear emitter with a p-type boron-doped hydrogenated amorphous silicon/nanocrystalline silicon [a-Si:H(p)/nc-Si:H(p)] stack was prepared for the silicon heterojunction (SHJ) solar cell to improve its short-circuit current density (). CO plasma treatment (CO PT) was applied to a-Si:H(p) to facilitate the crystallization of the subsequently deposited nc-Si:H(p). To evaluate the effect of the CO PT, two different nc-Si:H(p) layers with low and high crystallinity (χ) were investigated.
View Article and Find Full Text PDFRSC Adv
January 2025
Department of Solid State Physics and Nonlinear Physics, Faculty of Physics and Technology, AL-Farabi Kazakh National University Almaty 050040 Kazakhstan.
In this paper, Gd-doped ZrO gate dielectric films and metal-oxide-semiconductor (MOS) capacitors structured as Al/ZrGdO /Si were prepared using an ultraviolet ozone (UVO)-assisted sol-gel method. The effects of heat treatment temperature on the microstructure, chemical bonding state, optical properties, surface morphology and electrical characteristics of the ZrGdO composite films and MOS capacitors were systematically investigated. The crystalline phase of the ZrGdO films appeared only at 600 °C, indicating that Gd doping effectively inhibits the crystallization of ZrO films.
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