The depositions of (1 1 1) and (1 0 0) overlayers of Pd, Pt and Au on the CdS (1 0 [Formula: see text] 0) surface are studied within epitaxial mismatches of 6%-7%, using spin-polarized density functional theory. For both compressively strained and tensile-strained interfaces, the (1 0 0) overlayers were found to be thermodynamically more stable owing to better interfacial matching, and higher surface uncoordination resulting in higher reactivity. Pt(1 1 1) exhibits slip dislocations even for five-atomic-layer thick Pt slabs. Along with the leading metal-S interaction, the interfacial charge transfers indicate a weak metal-Cd interaction which decreases in strength in the order Pd > Pt ∼ Au. For the same substrate area, the accumulation of electronic charge for Pt overlayers is ∼1.5-2 times larger than that of Pd and Au. The n-type Schottky barriers of Au overlayers with the minimum mismatch are within 0.1 eV of the predictions of Schottky-Mott rule, indicating a relatively ideal, scantily reactive interface structure. This is in clear contrast to the Pt epitaxial overlayers which deviate by 0.6-0.8 eV.
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http://dx.doi.org/10.1088/1361-648X/ab3919 | DOI Listing |
Materials (Basel)
January 2025
Section of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, University Campus, 15784 Athens, Greece.
Heterojunction formation between BiVO nanomaterials and benchmark semiconductor photocatalysts has been keenly pursued as a promising approach to improve charge transport and charge separation via interfacial electron transfer for the photoelectrocatalytic degradation of recalcitrant pharmaceutical pollutants. In this work, a heterostructured TiO/Mo-BiVO bilayer photoanode was fabricated by the deposition of a mesoporous TiO overlayer using the benchmark P25 titania catalyst on top of Mo-doped BiVO inverse opal films as the supporting layer, which intrinsically absorbs visible light below 490 nm, while offering improved charge transport. A porous P25/Mo-BiVO bilayer structure was produced from the densification of the inverse opal underlayer after post-thermal annealing, which was evaluated on photocurrent generation in aqueous electrolyte and the photoelectrocatalytic degradation of the refractory anti-inflammatory drug ibuprofen under back-side illumination by visible and UV-Vis light.
View Article and Find Full Text PDFAdv Mater
January 2025
School of Pharmaceutical and Chemical Engineering, Taizhou University, Jiaojiang, 318000, P. R. China.
Efficient charge separation at the semiconductor/cocatalyst interface is crucial for high-performance photoelectrodes, as it directly influences the availability of surface charges for solar water oxidation. However, establishing strong molecular-level connections between these interfaces to achieve superior interfacial quality presents significant challenges. This study introduces an innovative electrochemical etching method that generates a high concentration of oxygen vacancy sites on BiVO surfaces (Ov-BiVO), enabling interactions with the oxygen-rich ligands of MIL-101.
View Article and Find Full Text PDFNano Lett
January 2025
Institute of Photoelectronic Thin Film Devices and Technology, State Key Laboratory of Photovoltaic Materials and Cells, Tianjin Key Laboratory of Efficient Solar Energy Utilization, Ministry of Education Engineering Research Center of Thin Film Photoelectronic Technology, Nankai University, 300350 Tianjin, China.
Hematite is a promising material for photoelectrochemical (PEC) water oxidation, but its photocurrent is limited by bulk charge recombination and poor oxidation kinetics. In this study, we report a high-performance FeO photoanode achieved through gradient surface gallium doping, utilizing a GaO overlayer on FeOOH precursors via atomic layer deposition (ALD) and co-annealing for Ga diffusion. The Ga-doped layer passivates surface states and modifies the band structure, creating a built-in electric field that enhances the charge separation efficiency.
View Article and Find Full Text PDFSmall
January 2025
School of Chemistry and Chemical Engineering, University of Surrey, GU2 7XH, Guildford, UK.
Sci Rep
December 2024
Department of Materials, Imperial College London, London, SW7 2AZ, UK.
Topological Insulators (TIs) are promising platforms for Quantum Technology due to their topologically protected surface states (TSS). Plasmonic excitations in TIs are especially interesting both as a method of characterisation for TI heterostructures, and as potential routes to couple optical and spin signals in low-loss devices. Since the electrical properties of the TI surface are critical, tuning TI surfaces is a vital step in developing TI structures that can be applied in real world plasmonic devices.
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