We proposed a new method for regulating the electrochemical signal by using Schottky barrier. The results show that the height of Schottky barrier can be altered by adsorbing charged substance to control the enhancement and attenuation of electrochemical signal. The Schottky interface formed by MoS and CQDs (carbon quantum dots) can achieve the selective detection of dopamine and overcome the distraction of ascorbic acid and uric acid with similar redox signal. The combination of Schottky barrier and electrochemical detection enhance the sensitivity and selectivity of electrochemical sensor significantly. It is a new strategy for improving electrochemical detection by introducing Schottky barrier into electrochemical process.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1016/j.aca.2019.06.025 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Optimization of In-Situ Growth of Superconducting Al/InAs Hybrid Systems on GaAs for the Development of Quantum Electronic Circuits.
Materials (Basel)
January 2025
CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
Hybrid systems consisting of highly transparent channels of low-dimensional semiconductors between superconducting elements allow the formation of quantum electronic circuits. Therefore, they are among the novel material platforms that could pave the way for scalable quantum computation. To this aim, InAs two-dimensional electron gases are among the ideal semiconductor systems due to their vanishing Schottky barrier; however, their exploitation is limited by the unavailability of commercial lattice-matched substrates.
View Article and Find Full Text PDFTrench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing.
Micromachines (Basel)
January 2025
Power Solutions Group, Onsemi, Scottsdale, AZ 85250, USA.
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations.
View Article and Find Full Text PDFAn electrically conductive dinuclear aluminium complex for the fabrication of a Schottky diode.
RSC Adv
January 2025
Department of Chemical and Pharmaceutical Sciences, University of Trieste Via L. Giorgieri 1 Trieste 34127 Italy
Electrical performances of a biphenyl-derived amido Schiff base ligand L and its dinuclear Al(iii) complex (complex 1) were investigated in a metal-semiconductor (MS) junction. Electrical studies revealed that complex 1 significantly enhanced the electrical conductivity and improved the characteristics of a Schottky barrier diode (SBD). The - characteristics demonstrated that complexation of ligand L with Al(iii) ion increased the conductivity by two orders of magnitude (conductivity of L = 1.
View Article and Find Full Text PDFUnraveling the Role of Interfacial Interactions in Electrical Contacts of Atomically Thin Transition-Metal Dichalcogenides.
ACS Nano
January 2025
College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
Van der Waals (vdW) contact has been widely regarded as one of the most potential strategies for exploiting low-resistance metal-semiconductor junctions (MSJs) based on atomically thin transition-metal dichalcogenides (TMDs), but this method is still not efficient due to weak metal-TMD interfacial interactions. Therefore, an understanding of interfacial interactions between metals and TMDs is essential for achieving low-resistance contacts with weak Fermi level pinning (FLP). Herein, we report how the interfacial interactions between metals and TMDs affect the electrical contacts by considering more than 90 MSJs consisting of a semiconducting TMD channel and different types of metal electrodes, including bulk metals, MXenes, and metallic TMDs.
View Article and Find Full Text PDFExploring Moiré Superlattices and Memristive Switching in Non-van der Waals Twisted Bilayer BiOSe.
ACS Appl Mater Interfaces
January 2025
Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India.
The discovery of moiré physics in two-dimensional (2D) materials has opened new avenues for exploring unique physical and chemical properties induced by intralayer/interlayer interactions. This study reports the experimental observation of moiré patterns in 2D bismuth oxyselenide (BiOSe) nanosheets grown through one-pot chemical reaction methods and a sonication-assisted layer separations technique. Our findings demonstrate that these moiré patterns result from the angular stacking of the nanosheets at various twist angles, leading to the formation of moiré superlattices (MSLs) with distinct periodicities.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!