AI Article Synopsis
- The electrical and optical characteristics of micro-light emitting diodes (-LEDs) were measured, focusing on current-voltage, capacitance-voltage curves, and both photoluminescence (PL) and electroluminescence (EL) spectra.
- Smaller -LEDs demonstrated a higher unit area emitting intensity compared to larger ones under identical conditions, attributed to improved internal quantum efficiency and extraction efficiency.
- This approach can enhance the brightness of high-efficiency surface-emitting devices built on a GaN-on-silicon platform.
Article Abstract
The electrical and optical properties of micro-light emitting diodes (-LEDs), including current-voltage (-), capacitance-voltage () curves, photoluminescence (PL) as well as electroluminescence (EL) spectra have been measured and analyzed. It is found that the unit area emitting intensity of small size -LED is stronger that of big size -LED at the same conditions, due to the enhancement of both the internal quantum efficiency and extraction efficiency . The present method of utilizing the -LED for improving the unit area brightness of LEDs is applicable to high efficiency surface emitting device on GaN-on-silicon platform.
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| http://dx.doi.org/10.1166/jnn.2020.16878 | DOI Listing |
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