Optimal Semiconductors for H and Ni Betavoltaics.

Sci Rep

Naval Research Laboratory, Washington, DC, 20375, USA.

Published: July 2019

AI Article Synopsis

  • Betavoltaic power sources use radioisotope energy to create electricity and are useful for remote applications because they can operate for long periods and have high energy densities.
  • To compete with other power sources, their efficiency needs to be improved by optimizing the beta source and selecting better semiconductor absorbers.
  • The paper suggests that 4H-SiC and diamond are optimal materials due to their effective energy coupling and electronic properties, while c-BN is also promising due to its ultra-wide bandgap and doping capabilities.

Article Abstract

Betavoltaic power sources based on the conversion of radioisotope energy to electrical power are considered an appealing option for remote applications due to extended period of operation and high energy densities. However, to be competitive with other power sources, their efficiency must be increased. This can be done through optimization of the beta source and selection of the semiconductor absorber. This paper evaluates available on the market and developing wideband gap semiconductors as prospective absorbers with H and Ni sources. Simulation results indicate that among wide band gap materials 4H-SiC and diamond are two optimal semiconductors due to the combination of good coupling efficiencies with isotope sources and good electronic transport properties. Additionally, having good coupling efficiency, an ultra-wide bandgap, and the capability for both n- and p-type doping, c-BN is a promising material for betavoltaic applications.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6659775PMC
http://dx.doi.org/10.1038/s41598-019-47371-6DOI Listing

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