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Stabilization of a monolayer tellurene phase at CdTe interfaces. | LitMetric

AI Article Synopsis

  • 2D materials are a hot topic in materials science, with exciting potential uses, but creating these low-dimensional systems is challenging, particularly in finding new candidates.
  • This study showcases a novel method for creating a monolayer of tellurene by bonding CdTe wafers, demonstrating how proper crystallographic surfaces can help in fabricating unique material phases.
  • Results indicate that this tellurene monolayer shows a significant increase in electrical conductivity compared to bulk CdTe, suggesting it could lead to advancements in electronics and further understanding of 2D materials' properties.

Article Abstract

Two-dimensional (2D) materials provide a plethora of novel condensed matter physics and are the new playground in materials science, offering potentially vast applications. One of the critical hurdles for many 2D systems is the synthesis of these low-dimensional systems as well as the prediction and identification of new candidates. Herein, a self-assembly of a monolayer tellurene by bonding CdTe wafers is demonstrated for the first time. The conventional applications of wafer-bonding range from the production of microelectromechanical systems to the synthesis of lattice-mismatched multi-junction photovoltaics. Due to the heterogeneous materials that are typically employed, the bond-interface usually contains a thin amorphous layer or arrays of dislocations. Such an interface is thus itself inactive and in many cases has detrimental effects on the device. The new material phase stabilized in this work consists of an undulating monolayer of tellurium atoms covalently bonded to {111} Cd-terminated CdTe wafer surfaces. First-principles calculations and experimentally observed changes in the localized plasmon excitation energy indicate the clear rearrangement of the underlying band-structure suggesting a metallic character, bands showing linear dispersion, and a significant asymmetric spin-band splitting. The I-V characteristics show the presence of a highly conductive pathway that lowers the resistivity by three orders of magnitude, as compared to bulk CdTe, which can be attributed to the tellurium monolayer. The findings indicate that suitably chosen crystallographic wafer surfaces can act as structural templates allowing the production of exotic phases. The presently stabilized monolayer is an addition to the family of tellurene variants, providing new insights into the fundamental properties of this and other emerging 2D materials, while attracting attention to the unusual side of the wafer-bonding technology exemplified in this study.

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Source
http://dx.doi.org/10.1039/c9nr02342aDOI Listing

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