We report on a significant reduction of both the radio-frequency beat note line width at 40.7 GHz and the integrated relative intensity noise of a 1 mm long edge-emitting monolithic Fabry-Perot InAs/InGaAs quantum dot semiconductor laser emitting from the ground state at 1250 nm by injection current control. For increasing injection currents, first an unlocked multi-mode behavior is observed and then, at a certain current above lasing threshold, self-locking of the longitudinal modes due to the internal non-linear effects occurs yielding a beat line width of 20 kHz (-3 dB) in contrast to tens of megahertz for lower injection currents. These results are confirmed by simulations.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OL.44.003478 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Topological Dirac-vortex microcavity laser for robust on-chip optoelectronics.
Light Sci Appl
March 2024
Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, MI, 48109, USA.
Dirac-vortex microcavity laser based on InAs/InGaAs quantum dots have been experimentally realized on silicon substrate. The topological laser features a large spectral range and high robustness against variations such as cavity size.
View Article and Find Full Text PDFEffects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy.
Phys Chem Chem Phys
December 2023
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.
This study investigates the impact of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si (Sample B) substrates using molecular beam epitaxy. The research explores the electrical characteristics of the lasers before and after being exposed to gamma radiation employing current-voltage (-), capacitance-voltage (-), deep level transient spectroscopy (DLTS) and Laplace DLTS techniques. The results show that the electrical properties of the lasers change due to gamma radiation exposure, and the extent of the change depends on the substrate used for growth.
View Article and Find Full Text PDFRoom-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon.
Light Sci Appl
October 2023
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, China.
Robust laser sources are a fundamental building block for contemporary information technologies. Originating from condensed-matter physics, the concept of topology has recently entered the realm of optics, offering fundamentally new design principles for lasers with enhanced robustness. In analogy to the well-known Majorana fermions in topological superconductors, Dirac-vortex states have recently been investigated in passive photonic systems and are now considered as a promising candidate for robust lasers.
View Article and Find Full Text PDFImproved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition.
Heliyon
September 2023
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
We demonstrate improved performance of quantum dot solar cells (QDSCs) by type-II InAs/GaAsSb structure. With a moderate Sb composition of 18% and high quality QDs, a high efficiency of 17.31% under AM1.
View Article and Find Full Text PDFTemperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots.
Nanomaterials (Basel)
February 2023
International Laboratory of Quantum Optoelectronics, HSE University, Soyuza Pechatnikov Str., 16, St. Petersburg 190008, Russia.
One-state and two-state lasing is investigated experimentally and through numerical simulation as a function of temperature in microdisk lasers with Stranski-Krastanow InAs/InGaAs/GaAs quantum dots. Near room temperature, the temperature-induced increment of the ground-state threshold current density is relatively weak and can be described by a characteristic temperature of about 150 K. At elevated temperatures, a faster (super-exponential) increase in the threshold current density is observed.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!