Threshold energies of Auger recombination in HgTe/CdHgTe quantum well heterostructures with 30-70 meV bandgap.

We calculate the threshold energies of Auger recombination in the HgTe/CdHgTe quantum well heterostructures with the bandgap in the 30-70 meV range. It is shown that there is a maximum in the temperature dependence of the threshold energy for Auger process involving two electrons and a hole. For Auger process involving two holes and an electron, in which the hole is in the second valence subband in the final state, the threshold energy decreases down to zero and then increases steeply as temperature grows. The results of calculation can be considered as guidelines for designing the long-wavelength laser structures.