A novel barium silicon phosphide was synthesized and characterized. BaSiP crystallizes in the noncentrosymmetric space group 2 (No. 33) and exhibits a unique bonding connectivity in the Si-P polyanion not found in other compounds. The crystal structure is composed of SiP tetrahedra connected into one-dimensional double-tetrahedra chains through corner sharing, edge sharing, and covalent P-P bonds. Chains are surrounded by Ba cations to achieve an electron balance. The novel compound exhibits semiconducting properties with a calculated bandgap of 1.6 eV and experimental optical bandgap of 1.88 eV. The complex pseudo-one-dimensional structure manifests itself in the transport and optical properties of BaSiP, demonstrating ultralow thermal conductivity (0.56 W m K at 300 K), promising second harmonic generation signal (0.9 × AgGaS), as well as high laser damage threshold (1.6 × AgGaS, 48.5 MW/cm) when compared to the benchmark material AgGaS. Differential scanning calorimetry reveals that BaSiP melts congruently at 1373 K, suggesting that large single crystal growth may be possible.
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http://dx.doi.org/10.1021/jacs.9b04653 | DOI Listing |
Chemistry
March 2021
Department of Chemistry, University of Munich, Butenandtstraße 5-13, 81377, Munich, Germany.
Tetrahedra-based nitrides with network structures have emerged as versatile materials with a broad spectrum of properties and applications. Both nitridosilicates and nitridophosphates are well-known examples of such nitrides that upon doping with Eu exhibit intriguing luminescence properties, which makes them attractive for applications. Nitridosilicates and nitridophosphates show manifold structural variability; however, no mixed nitridosilicatephosphates except SiPN and SiP2N4NH have been described so far.
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