AI Article Synopsis
- A new all-silicon (Si) photoelectronic detector has been developed, featuring a unique metasurface antenna integrated with a Si nanowire array using advanced electron beam lithography for precise alignment.
- Simulations using the Finite Difference Time Domain (FDTD) method indicated that the design ensures nearly perfect light absorption, achieving a remarkable 90% at a wavelength of 1.05 μm.
- Experimental results demonstrated high responsivity (94.5 mA/W) and detectivity (4.38 × 10^10 cm Hz/W) at 1.15 μm, rivaling traditional compound detector technologies, attributed to the enhanced quantum efficiency in the Si nanowires' one-dimensional conduction channels.
Article Abstract
An improved architecture for all-Si based photoelectronic detectors has been developed, consisting of a specially designed metasurface as the antenna integrated into a Si nanowire array on the insulator by an electron beam lithography based self-alignment process. Simulation using the Finite Difference Time Domain (FDTD) method was carried out to ensure perfect absorption of light by the detector. Optic measurement shows a 90% absorption at 1.05 μm. Photoelectronic characterization demonstrates the responsivity and detectivity as high as 94.5 mA/W and 4.38 × 10 cm Hz/W, respectively, at 1.15 μm with the bandwidth of 480 nm, which is comparable to that of III-V/II-VI compound detectors. It is understood that the outstanding performances over other reported all-Si based detectors originate from the enhanced quantum efficiency in one-dimensional conduction channels with high density of states, which efficiently accommodate the emitted plasmonic hot electrons for high conduction in the Si nanowires, enabling the near-infrared detection by all-Si based detectors.
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| http://dx.doi.org/10.1021/acsnano.9b04236 | DOI Listing |
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