AI Article Synopsis
- A Nd:GdVO/GaAs microchip laser was developed that achieved pulse durations of less than a nanosecond through high optical intensity triggering two photon absorption in GaAs.
- The shortest pulse recorded was 690 ps, claimed to be the shortest from a purely GaAs saturable absorber.
- This laser demonstrated impressive performance metrics, including a maximum output power of 1 W, a repetition rate of 190 kHz, pulse energy of 7.5 μJ, and peak power of 10.8 kW, showcasing GaAs's potential as an effective saturable absorber.
Article Abstract
A Nd:GdVO/GaAs passively Q-switched laser has been demonstrated based on a microchip design. Under high pump power, the high optical intensity inside the laser cavity triggered the two photon absorption of GaAs, and the pulse duration was shortened to sub-nanosecond level. The shortest pulse of 690 ps was obtained, which we believe is the shortest pulse ever generated with a pure GaAs saturable absorber. The maximum average output power, highest repetition rate, largest pulse energy, and highest peak power were 1 W, 190 kHz, 7.5 μJ, and 10.8 kW, respectively. The results indicated that GaAs is a promising passively Q-switched saturable absorber and still has potential to explore.
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| http://dx.doi.org/10.1364/AO.58.004533 | DOI Listing |
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