The rational design and synthesis of low-dimensional chalcogenides with desired properties is vital but still an enormous challenge. Herein, a novel quaternary sulphide, Ba8Zn4Ga2S15 (FJ-2), has been designed by a cation regulation strategy and successfully prepared. It comprises a one-dimensional (1D) {[Zn4Ga2S15]16-}∞ anion chain constructed from supertetrahedron [Zn4S10] clusters. The structure of FJ-2 is unique, as in the literature there are no other 1D structures of the type X/Zn/Ga/Q (X = cations; Q = chalcogen). Moreover, FJ-2 exhibits strong yellow photoluminescence emission at room temperature. DFT calculations using the VASP software package have aided the understanding of the relationship between the optical properties and electronic structure.
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http://dx.doi.org/10.1039/c9cc02575h | DOI Listing |
Nanoscale
January 2025
Physical Chemistry, TU Dresden, Zellescher Weg 19, 01069 Dresden, Germany.
Tunable optical properties exhibited by semiconductor nanocrystals (NCs) in the near infrared (NIR) spectral region are of particular interest in various applications, such as telecommunications, bioimaging, photodetection, photovoltaics, . While lead and mercury chalcogenide NCs do exhibit exemplary optical properties in the NIR, Cu-In-Se (CISe)-based NCs are a suitable environment-friendly alternative to these toxic materials. Several reports of NIR-emitting (quasi)spherical CISe NCs have been published, but their more complex-shaped counterparts remain rather less explored.
View Article and Find Full Text PDFSci Rep
January 2025
College of Integrative Studies, Abdullah Al Salem University, Khaldiya, Kuwait.
In this study, we explore the photovoltaic performance of an innovative high efficiency heterostructure utilizing the quaternary semiconductor CuFeSnSe (CFTSe). This material features a kesterite symmetrical structure and is distinguished by its non-toxic nature and abundant presence in the earth's crust. Utilizing the SCAPS simulator, we explore various electrical specifications such as short circuit current (J), open circuit voltage (V), the fill factor (FF), and power conversion efficiency (PCE) were explored at a large range of thicknesses, and the acceptor carrier concentration doping (N).
View Article and Find Full Text PDFInorg Chem
December 2024
College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian Province 350108, PR China.
Surface charge transfer doping (SCTD) has been established as an efficient strategy to achieve strong electronic coupling interactions between semiconductors and dopants, which lead to highly efficient electron transport over semiconductors. Herein, we report a facile, easily accessible, and effective SCTD strategy to exquisitely modulate the interfacial charge transfer over transition metal chalcogenides (TMCs: CdS, ZnCdS, CdInS, and ZnInS) through surface modification with a nonconjugated polymer, poly(dimethyldiallylammonium chloride) (PDDA). We provide evidence that PDDA, as a surface electron transfer acceptor, can be used to enable rapid, directional, and tunable charge transfer along with an optimal charge lifetime over TMCs in photoredox catalysis because of the high-efficiency electron-trapping property of quaternary ammonium functional groups in the molecular structure of PDDA.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Physical Science and Technology, School of Physics and Mechanics, Wuhan University of Technology, Wuhan 430070, China.
Expanding material types and developing two-dimensional (2D) semiconductor materials with high performance have been hotspots in the field. In this research, it is found that the 12 existing semiconductors ABXY (A = K, Na; B = Li, Na; X = Al, Ga, In; Y = P, As, Sb) have a pronounced layered structure. We predict their 2D structures and properties, using first-principles calculations.
View Article and Find Full Text PDFInorg Chem
December 2024
Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, United States.
We report a detailed structural study of a series of five new quaternary Eu(II)-containing mixed chalcogenide phases, EuSiSeS, EuSiSeS, EuSiSeS, EuSiSeS, and EuSiSe, synthesized using the flux-assisted boron chalcogen mixture (BCM) method. High-quality crystals were grown, and their crystal structures were determined by single-crystal X-ray diffraction. All members of the EuSiSeS series crystallize in the monoclinic crystal system with space group 2/, except EuSiSe, which crystallizes in the 2 space group.
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