In this study, hydrogen peroxide (HO) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication. As a result, the device with SCCO + HO treatment exhibits the lowest subthreshold swing of 82 mV/dec, the lowest interface trap density of 8.76 × 10 eV cm, the lowest hysteresis of 47 mV, and an excellent reliability and uniformity characteristic compared with any other control groups. Besides, an extremely high field-effect mobility of 98.91 cm/V s can also be observed, while there is even a desirable positive shift for the threshold voltage. Notably, compared with the untreated sample, the highest on/off current ratio of 5.11 × 10 can be achieved with at least four orders of magnitude enhancement by this unique treatment.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acsami.9b04257 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Atomic Layer Deposition of WO-Doped InO for Reliable and Scalable BEOL-Compatible Transistors.
Nano Lett
May 2024
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.
Article Synopsis
- * Introducing low concentrations of WO (1-4 atom %) in the indium oxide films improves stoichiometry, allowing the devices to turn off reliably and providing stability in threshold voltage.
- * The ALD IWO FETs show impressive characteristics, such as a low subthreshold slope of 67 mV/decade, minimal hysteresis, enhanced tunability of threshold voltage, and excellent performance even at sub-100 nm channel lengths, making them ideal for advanced
Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application.
ACS Appl Mater Interfaces
November 2023
Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China.
Technologies for human-machine interactions are booming now. In order to achieve multifunctional sensing abilities of electronic skins, further developments of various sensors are in urgent demand. Herein, a dual-mode proximity sensor based on an oxide thin-film transistor (TFT) is reported.
View Article and Find Full Text PDFDensity functional theoretical study of the tungsten-doped InO catalyst for CO hydrogenation to methanol.
Phys Chem Chem Phys
October 2022
School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300350, China.
Indium oxide is a promising catalyst for CO hydrogenation to methanol and has been extensively investigated in recent years. However, the studies on doped InO for methanol synthesis are relatively few, and tungsten-doped InO has not been reported yet. Herein, the mechanism of the methanol synthesis from CO hydrogenation on the defective W-doped InO model (W-InO_D) has been investigated density functional theory (DFT) calculations.
View Article and Find Full Text PDFTungsten-Doped Zinc Oxide and Indium-Zinc Oxide Films as High-Performance Electron-Transport Layers in N-I-P Perovskite Solar Cells.
Polymers (Basel)
March 2020
Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea.
Perovskite solar cells (PSCs) have attracted tremendous research attention due to their potential as a next-generation photovoltaic cell. Transition metal oxides in N-I-P structures have been widely used as electron-transporting materials but the need for a high-temperature sintering step is incompatible with flexible substrate materials and perovskite materials which cannot withstand elevated temperatures. In this work, novel metal oxides prepared by sputtering deposition were investigated as electron-transport layers in planar PSCs with the N-I-P structure.
View Article and Find Full Text PDFIn this study, hydrogen peroxide (HO) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!