Simultaneous growth of GaS and GaS thin films using physical vapor deposition with GaS powder as a single precursor.

High quality gallium sulfide II (GaS) and gallium sulfide III ([Formula: see text]) thin films on [Formula: see text]/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or GaS thin films on SiO/Si substrates. Relatively high and low substrate temperature conditions resulted in GaS and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses.