In this study, electrical characteristics of MoTe field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH) sensing, which confirms the p- and n-type behavior of MoTe devices.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6603731 | PMC |
| http://dx.doi.org/10.3390/s19112551 | DOI Listing |
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