Flexible and wearable electrical devices have attracted extensive research attention in recent years. In the device fabrication process, the low-cost and compatibility with industrialized mass production are of great importance. Herein, membrane-based flexible photodetectors (PDs) based on Polyvinylidene Fluoride filter membrane with the structure of Ag nanowires (NWs)/ZnO NWs/graphene were fabricated by a full-solution method. The built-in electric field due to the ZnO/graphene Schottky junction is in favor of the separation and transport of photo-generated carriers, leading to enhanced device performance. The I /I ratio was as high as ∼10, which is far superior to that of the reported ZnO-based fiber-shaped PDs. The PDs with remarkable flexibility can be easily attached to the human body and even can work steadily under serious bending conditions. Particularly, the photocurrent can keep 95% of the maximum value after the PD was bent 1000 times. In addition to the wearable applications, the membrane-based PD arrays can also be applied for imaging application.
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http://dx.doi.org/10.1088/1361-6528/ab26ed | DOI Listing |
Nanotechnology
September 2019
Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
Flexible and wearable electrical devices have attracted extensive research attention in recent years. In the device fabrication process, the low-cost and compatibility with industrialized mass production are of great importance. Herein, membrane-based flexible photodetectors (PDs) based on Polyvinylidene Fluoride filter membrane with the structure of Ag nanowires (NWs)/ZnO NWs/graphene were fabricated by a full-solution method.
View Article and Find Full Text PDFNanomaterials (Basel)
May 2019
Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 04623, Korea.
The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C for 10 min in a vacuum to desorb chemical residues that may serve as trap sites at the interface between graphene and ZnO. The device clearly showed a rectifying behavior with the Schottky barrier of ≈0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2015
Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616-5294, United States.
Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions.
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