AI Article Synopsis
- The study examines how nitridation treatment affects the band alignment between few-layer MoS (molybdenum disulfide) and HfO (hafnium oxide) using X-ray photoelectron spectroscopy.
- The findings show that nitridation leads to changes in valence and conduction band offsets, with values shifting from (2.09 eV, 2.41 eV) to (2.34 eV, 2.16 eV).
- The results suggest that the change in band alignment is due to the formation of Mo-N bonds and surface adjustments in HfO, indicating potential applications in energy band engineering for various two-dimensional material integrations.
Article Abstract
The effect of nitridation treatment on the band alignment between few-layer MoS and HfO has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS/HfO with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ± 0.1 (2.16 ± 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO triggered by nitridation. This study on the energy band engineering of MoS/HfO heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.
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Source |
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6541675 | PMC |
| http://dx.doi.org/10.1186/s11671-019-3020-0 | DOI Listing |
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