The construction of junctions on hematite is an effective way to overcome the problems of slow charge separation and transfer kinetics, but constructing the junction is a significant challenge in photoelectrochemical (PEC) water splitting. Herein, a considerable improvement in PEC performance for α-Fe O was achieved following the introduction of a p-n homojunction between n-type α-Fe O and p-type Ca-doped α-Fe O through a facile hydrothermal method. The resultant 3D branched Ca-Fe O /Fe O enhanced the absorption intensity and reached a photocurrent density of 2.14 mA cm at 1.23 V vs. reversible hydrogen electrode (RHE). The merit of the desired lattice matching of the buried p-n homojunction structure built an internal electric field, which led to appropriate band alignment. These results were supported by a series of photoelectrochemical measurements, in particular, surface photovoltage (SPV) measurements. For further improvement of the charge-separation efficiency, a combination of separated cocatalysts was established on the homojunction structure, in which Pt acted as the electron collector and was deposited on the bottom, and Co-Pi as the hole-extraction cocatalyst was inserted to accelerate hole transfer on the surface of the photoanode. The resulting Co-Pi/Ca-Fe O /Fe O /Pt branched nanorods showed a significant improvement in charge-separation efficiency and photocurrent density (2.94 mA cm at 1.23 V vs. RHE). The present strategy, both the construction of the p-n homojunction and the coupling electron- and hole-transfer cocatalyst, could be expanded to many unstable or low-efficiency semiconductors for the design and fabrication of cost-effective photoanodes in PEC water splitting.
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http://dx.doi.org/10.1002/cssc.201901331 | DOI Listing |
Nanophotonics
September 2024
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou 310058, China.
Silicon photonics with the advantages of low power consumption and low fabrication cost is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband operation, high speed, and low integration cost can be good additions to the SiGe photodetectors, supporting high-speed photodetection in wavelength bands beyond 1.6 μm on silicon.
View Article and Find Full Text PDFNat Commun
November 2024
College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China.
J Am Chem Soc
November 2024
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China.
Control over the carrier type of semiconductor quantum dots (QDs) is pivotal for their optoelectronic device applications, and it remains a nontrivial and challenging task. Herein, a facile doping strategy via K impurity exchange is proposed to convert the NIR n-type toxic heavy-metal-free AgAuSe (AAS) QDs to p-type. When the dopant reaches saturation at approximately 22.
View Article and Find Full Text PDFNano Lett
November 2024
Max Planck Institute of Microstructure Physics, 06120 Halle, Germany.
Two-dimensional materials show great potential for future electronics beyond silicon materials. Here, we report an exotic multiple-port device based on multiple electrically tunable planar p-n homojunctions formed in a two-dimensional (2D) ambipolar semiconductor, tungsten diselenide (WSe). In this device, we prepare multiple gates consisting of a global gate and several local gates, by which electrostatically induced holes and electrons are simultaneously accumulated in a WSe channel, and furthermore, at the boundaries, p-n junctions are formed as directly visualized by Kelvin probe force microscopy.
View Article and Find Full Text PDFNanomaterials (Basel)
October 2024
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang 37673, Gyeongbuk, Republic of Korea.
Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~10. However, their structural complexity, such as an epitaxy process after an etch process for a Si channel with a thickness of several nanometers, has limited broader research. We demonstrated a FBFET using in-plane WSe p-n homojunction.
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