In this work, we investigated the sensing performance of epitaxial graphene on Si-face 4H-SiC (EG/SiC) for liquid-phase detection of heavy metals (e.g., Pb and Cd), showing fast and stable response and low detection limit. The sensing platform proposed includes 3D-printed microfluidic devices, which incorporate all features required to connect and execute lab-on-chip (LOC) functions. The obtained results indicate that EG exhibits excellent sensing activity towards Pb and Cd ions. Several concentrations of Pb solutions, ranging from 125 nM to 500 µM, were analyzed showing Langmuir correlation between signal and Pb concentrations, good stability, and reproducibility over time. Upon the simultaneous presence of both metals, sensor response is dominated by Pb rather than Cd ions. To explain the sensing mechanisms and difference in adsorption behavior of Pb and Cd ions on EG in water-based solutions, we performed van-der-Waals (vdW)-corrected density functional theory (DFT) calculations and non-covalent interaction (NCI) analysis, extended charge decomposition analysis (ECDA), and topological analysis. We demonstrated that Pb and Cd ions act as electron-acceptors, enhancing hole conductivity of EG, due to charge transfer from graphene to metal ions, and Pb ions have preferential ability to binding with graphene over cadmium. Electrochemical measurements confirmed the conductometric results, which additionally indicate that EG is more sensitive to lead than to cadmium.
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http://dx.doi.org/10.3390/s19102393 | DOI Listing |
Nat Nanotechnol
January 2025
Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China.
The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays. However, thin-film perovskites with inhomogeneous spatial distribution of light emission and unstable surface under lithography are incompatible with the micro-LED devices.
View Article and Find Full Text PDFACS Nano
January 2025
Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Advanced Research Institute of Multidisciplinary Science, and School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe at the boundary of ML and bilayer graphene on SiC.
View Article and Find Full Text PDFNat Commun
January 2025
Department of Materials Science & International Institute of Intelligent Nanorobots and Nanosystems, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200438, People's Republic of China.
The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epitaxy has been so far applied to a limited range of material systems, owing to the need of stringent growth conditions to avoid graphene damaging, and has therefore remained challenging for the synthesis of oxide nanomembranes. Here, we demonstrate the remote epitaxial growth of an oxide nanomembrane (vanadium dioxide, VO) with a sub-nanometer thick amorphous interlayer, which can withstand potential sputtering-induced damage and oxidation.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
Time-reversal symmetry breaking of a topological insulator phase generates zero-field edge modes which are the hallmark of the quantum anomalous Hall effect (QAHE) and of possible value for dissipation-free switching or non-reciprocal microwave devices. But present material systems exhibiting the QAHE, such as magnetically doped bismuth telluride and twisted bilayer graphene, are intrinsically unstable, limiting their scalability. A pristine magnetic oxide at the surface of a TI would leave the TI structure intact and stabilize the TI surface, but epitaxy of an oxide on the lower-melting-point chalcogenide presents a particular challenge.
View Article and Find Full Text PDFSmall Methods
December 2024
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, No. 68 Wenchang Road, Kunming, 650093, China.
Controllably modulating the structure of transition-metal chalcogenides (TMCs) from 2D to 1D and tuning their electronic properties has drawn particular attention currently due to their remarkable properties and potential applications. In this work, by precisely controlling the chemical concentration of Te atoms, the transformation from the 2D honeycomb AgTe monolayer to high-quality and well-defined 1D AgTe nanowires on the Ag(111) substrate has been successfully achieved. The combination of scanning tunneling microscopy measurements and first-principles calculations has confirmed that the mechanism underlying the entire dimensional transformation lies in the directional movement of Ag atoms in the 2D AgTe monolayer regulated by the concentration of Te atoms.
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