We demonstrate the negative capacitance (NC) effect of HfZrO-based field-effect transistors (FETs) in the experiments. Improved I, SS, and G of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET. In this experiment, the bottom MIS transistors with different passivation time are equivalent to the NC devices with different MOS capacitances. Meanwhile, the electrical properties of NCFET with 40 min passivation are superior to that of NCFET with 60 min passivation owing to the good matching between C and C. Although SS of sub-60 mV/decade is not achieved, the non-hysteretic transfer characteristics beneficial to the logic applications are obtained.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6534638 | PMC |
| http://dx.doi.org/10.1186/s11671-019-3013-z | DOI Listing |
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