Gradient Sn-Doped Heteroepitaxial Film of Faceted Rutile TiO as an Electron Selective Layer for Efficient Perovskite Solar Cells.

ACS Appl Mater Interfaces

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China.

Published: May 2019

The high-efficiency photocarrier collection at the interfaces plays an important role in improving the performance of perovskite solar cells (PSCs) because the photocarrier effective diffusion lengths in the lead halide perovskite absorbers usually surpass the incident depths of light. Developing the electron selective layer (ESL) that has good interfaces with photoactive perovskite and current collector layer-like fluorine-doped tin oxide (FTO) is actively pursued. Here, an unusual dense film of faceted rutile TiO single crystals with a gradient of the Sn dopant grown heteroepitaxially on the FTO layer is obtained by a hydrothermal route and subsequent thermal treatment. Owing to the global features including low concentration of defects, atomically smooth coherent interface with FTO, and gradient doping-induced built-in electric field to promote the collection of photoelectrons in it, an optimal PSC with such a film as the ESL exhibits an efficiency of 17.2% with an open-circuit voltage of 1.1 V and fill factor of 76.1%, which are among the highest values of the PSCs with rutile TiO films as ESLs.

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Source
http://dx.doi.org/10.1021/acsami.9b04308DOI Listing

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