Interlayer rotational alignment in van der Waals (vdW) structures of two-dimensional (2D) materials couples strongly to electronic properties and, therefore, has significant technological implications. Nevertheless, controlling the rotation of an arbitrary 2D material flake remains a challenge in the development of rotation-tunable electronics, for the emerging field of twistronics. In this article, we reveal a general moiré-driven mechanism that governs the interlayer rotation. Controlling the moiré can therefore hold promise for controlling the interlayer rotation. We further demonstrate mismatch strain engineering as a useful tool to design the interlayer rotation via changing the energy landscape of moiré within a finite-sized region. The robustness and programmable nature of our approach arise from moiré symmetry, energetics, and mechanics. Our approach provides another possibility to the on-demand design of rotation-tunable electronics.
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http://dx.doi.org/10.1021/acsnano.9b01794 | DOI Listing |
Nano Lett
January 2025
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
In van der Waals (vdW) architectures of transition metal dichalcogenides (TMDCs), the coupling between interlayer exciton and quantum degrees of freedom opens unprecedented opportunities for excitonic physics. Taking the MoSe homobilayer as representative, we identify that the interlayer registry defines the nature and dynamics of the lowest-energy interlayer exciton. The large layer polarization () is proved, which ensures the formation of layer-resolved interlayer excitons.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization, or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However, multiferroic order is difficult to achieve, requiring complicated coupling between electron and spin degrees of freedom. We propose a universal method to engineer multiferroics from van der Waals magnets by taking advantage of the fact that changing the stacking between 2D layers can break inversion symmetry, resulting in ferroelectricity as well as magnetoelectric coupling.
View Article and Find Full Text PDFSci Rep
January 2025
Faculty of Physics, University of Warsaw, Pasteura 5, 02093, Warsaw, Poland.
Recent experimental realizations of bilayer boron materials motivated us to study the structure and properties of α-sheet-based bilayer borophenes with interlayer covalent bonds. As shown here, at least three stacking variations are possible: AA, AB, and [Formula: see text]. The on-top AA-stacking has been obtained experimentally supported on a metallic substrate.
View Article and Find Full Text PDFChem Asian J
December 2024
Birla Institute of Technology & Science Pilani - Hyderabad Campus, Chemistry department, Shameerpet, 500078, Hyderabad, INDIA.
The incorporation of photoactive organic dyes into layered inorganic materials enhances their optical and chemical properties, making them ideal for sensing applications. In this study, Bisindolyl methane (BIM)-based neutral probes were integrated with bentonite clay to explore their sensing capabilities. Probe 1 (unoxidized BIM) and Probe 2 (oxidized BIM) generally exhibited quenched luminescence in solution due to intramolecular rotations.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, China.
Moiré potentials caused by lattice mismatches significantly alter electrons in two-dimensional materials, inspiring the discovery of numerous unique physical properties. While strain modulates the structure and symmetry of the moiré potential, serving as a tuning mechanism for interactions, the impact of out-of-plane deformation, e.g.
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