Natrium Doping Pushes the Efficiency of Carbon-Based CsPbI Perovskite Solar Cells to 10.7.

iScience

School of Materials Science and Engineering, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, People's Republic of China. Electronic address:

Published: May 2019

AI Article Synopsis

  • CsPbI inorganic perovskite is a strong candidate for long-lasting solar cells due to its excellent thermal stability, but current carbon-based versions lack efficiency because of poor film quality and energy level mismatches.
  • Doping the CsPbI lattice with sodium (Na) enhances grain quality and reduces defects, which leads to better energy band alignment with electrodes and a significant increase in voltage from 0.77 to 0.92 V.
  • As a result, the power conversion efficiency of the sodium-doped CsPbI solar cells jumps from 8.6% to 10.7%, a notable improvement, while the non-encapsulated devices show no significant performance loss even after 70

Article Abstract

The CsPbI inorganic perovskite is a potential candidate for fabricating long-term operational photovoltaic devices owing to its intrinsic superb thermal stability. However, the carbon-based CsPbI perovskite solar cells (C-PSCs) without hole transport material (HTM) are currently disadvantaged by their relatively low power conversion efficiency resulting from the poor grain quality and mismatched energy band levels of the as-made CsPbI films. Herein we demonstrate that by doping Na into the CsPbI lattice, the grain quality is significantly improved with low defect density, and also, the energy band levels are better matched to the contact electrodes, affording a higher built-in potential. Consequently, the V of the C-PSCs is drastically increased from 0.77 to 0.92 V, and the efficiency from 8.6% to 10.7%, a record value for the CsPbI PSCs without HTM. Moreover, the non-encapsulated device showed virtually no performance degradation after 70 days of storage in air atmosphere.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6503139PMC
http://dx.doi.org/10.1016/j.isci.2019.04.025DOI Listing

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