AI Article Synopsis

  • A novel nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) was developed featuring a nanoporous bottom distributed Bragg reflector (DBR) for improved performance at room temperature under continuous-wave (CW) optical pumping.! -
  • The nanoporous design allows for the growth of high-reflectance DBRs while maintaining essential conductivity, crucial for the high efficiency of VCSELs.! -
  • The laser operates at a wavelength of 462 nm with a low threshold power density of around 5 kW/cm and displays consistent emission polarization in the a-direction across various locations.!

Article Abstract

A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of ~5 kW/cm and a FWHM of ~0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.

Download full-text PDF

Source
http://dx.doi.org/10.1364/OE.27.009495DOI Listing

Publication Analysis

Top Keywords

nonpolar gan-based
8
vcsel nanoporous
8
distributed bragg
8
polarization-pinned emission
4
emission continuous-wave
4
continuous-wave optically
4
optically pumped
4
pumped nonpolar
4
gan-based vcsel
4
nanoporous distributed
4

Similar Publications

Non-polar m-plane GaN terahertz quantum cascade laser (THz-QCL) structures have been studied. One is traditional three-well resonant-phonon (RP) design scheme. The other is two-well phonon scattering injection (PSI) design scheme.

View Article and Find Full Text PDF
Article Synopsis
  • A novel nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) was developed featuring a nanoporous bottom distributed Bragg reflector (DBR) for improved performance at room temperature under continuous-wave (CW) optical pumping.! -
  • The nanoporous design allows for the growth of high-reflectance DBRs while maintaining essential conductivity, crucial for the high efficiency of VCSELs.! -
  • The laser operates at a wavelength of 462 nm with a low threshold power density of around 5 kW/cm and displays consistent emission polarization in the a-direction across various locations.!
View Article and Find Full Text PDF

We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation.

View Article and Find Full Text PDF

Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors.

ACS Omega

February 2018

Academy of Scientific and Innovative Research, CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012, India.

Surface-engineered nanostructured nonpolar (112̅0) gallium nitride (GaN)-based high-performance ultraviolet (UV) photodetectors (PDs) have been fabricated. The surface morphology of a nonpolar GaN film was modified from pyramidal shape to flat and trigonal nanorods displaying facets along different crystallographic planes. We report the ease of enhancing the photocurrent (5.

View Article and Find Full Text PDF

Light extraction from InGaN/GaN-based multiple-quantum-well (MQW) light emitters is enhanced using a simple, scalable, and reproducible method to create hexagonally close-packed conical nano- and micro-scale features on the backside outcoupling surface. Colloidal lithography via Langmuir-Blodgett dip-coating using silica masks (d = 170-2530 nm) and Cl/N-based plasma etching produced features with aspect ratios of 3:1 on devices grown on semipolar GaN substrates. InGaN/GaN MQW structures were optically pumped at 266 nm and light extraction enhancement was quantified using angle-resolved photoluminescence.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!