AI Article Synopsis
- The study discusses the development of tin gallium oxide ((SnGa)O) solar-blind photodetectors created using plasma-assisted molecular beam epitaxy on sapphire substrates with up to 10% tin content.
- Incorporating tin into gallium oxide adjusted the optical bandgap, lowering it from 5.0 eV at 0% Sn to 4.6 eV at 10% Sn.
- Increasing the tin concentration enhanced the peak responsivity of the MSM devices significantly, from 0.75 A/W to nearly 16 A/W, while also affecting their temporal response.
Article Abstract
We report on tin gallium oxide ((SnGa)O) solar-blind metal-semiconductor-metal (MSM) photodetectors grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates with varying tin content up to X=10%. Incorporation of Sn into GaO was found to shift the optical bandgap of the epilayers from 5.0 eV (248 nm) for 0% Sn to 4.6 eV (270 nm) for 10% Sn content. Varying of the Sn concentration was also found to enable controlled tuning of the peak responsivity and cutoff wavelengths of MSM devices fabricated from the epilayers, with peak responsivity ranging from 0.75 A/W to nearly 16 A/W as the Sn concentration was increased from 0% to 10%. The high responsivity is attributed to photoconductive gain that increases for higher Sn concentrations and is accompanied by a slowing of the temporal response of the MSM detectors.
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| http://dx.doi.org/10.1364/AO.58.000D22 | DOI Listing |
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