Role of Oxide/Metal Bilayer Electrodes in Solution Processed Organic Field Effect Transistors.

Sci Rep

CNRS, Université Bordeaux, Laboratoire de l'Intégration du Matériau au Système (IMS), UMR 5218, ENSCBP, 16 avenue Pey Berland, 33607, Pessac Cedex, France.

Published: April 2019

AI Article Synopsis

  • Researchers investigated the performance of organic field-effect transistors (OFETs) using a small molecule called C-BTBT, focusing on different electrode configurations.
  • They compared contact resistance across various combinations of electrodes, including Ag and Au with oxide interlayers.
  • The study found that using oxide interlayers reduced contact resistance and improved device performance, with specific explanations for the enhanced electrical properties based on the molecular structure at the interfaces.

Article Abstract

High performance, air stable and solution-processed small molecule 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C-BTBT) based organic field-effect transistors (OFETs) with various electrode configurations were studied in detail. The contact resistance of OFET devices with Ag, Au, WO/Ag, MoO/Ag, WO/Au, and MoO/Au were compared. Reduced contact resistance and consequently improved performance were observed in OFET devices with oxide interlayers compared to the devices with bare metal electrodes. The best oxide/metal combination was determined. The possible mechanisms for enhanced electrical properties were explained by favorable morphological and electronic structure of organic/metal oxide/metal interfaces.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6491551PMC
http://dx.doi.org/10.1038/s41598-019-43237-zDOI Listing

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