Design Optimization of InGaAs/GaAsSb-Based -Type Gate-All-Around Arch-Shaped Tunneling Field-Effect Transistor.

In this work, an InGaAs/GaAsSb-based -type gate-all-around (GAA) arch-shaped tunneling fieldeffect transistor (TFET) was designed and analyzed using technology computer-aided design (TCAD) simulations. The device performance was investigated in views of the on-state current (), subthreshold swing (), and / ratio. For high current drivability, InGaAs/GaAsSb heterojunction is used to form the broken bandgap. Owing to the GAA arch-shaped structure of the TFET, the tunneling region between source and channel extended, thus and are improved. However, it has some performance variations that are related with the height of the source region (), the epitaxially grown thickness of the channel (), and the height of the drain region (). Therefore, we performed a design optimization of the proposed device with the variables of , , and . The designed and optimized InGaAs/GaAsSb-based -type GAA arch-shaped TFET demonstrated an of 215 A/m of 18 mV/dec and / of 1.64 × 10.