In case of the conventional SiCOH films, a post-deposition process was used to make pores by vaporization of porogen (e.g., hydrocarbon) for decreasing the dielectric constant. However, the authors intended the deposition of the SiCOH films, which does not need the post-deposition process to form the pores by using the dual precursors having different structures. The octamethylcy-clotetrasiloxane (OMCTS) and tetraethylorthosilicate (TEOS) have different structures which were of the ring shape and the linear shape, respectively. The OMCTS and TEOS were used to fabricate the plasma polymerized low dielectric constant SiCOH film by using the plasma enhanced chemical vapor deposition system in this work. A ratio of OMCTS and TEOS was adjusted by controlling flow rates of precursor carrier gases into the process chamber. The SiCOH films, which were deposited with dual precursors, showed the very low dielectric constants (relative dielectric constant k 2.06 and 2.09) at plasma power of 10 W. All the fabricated SiCOH films showed the proper leakage current densities below 10 A/cm at 1 MV/cm as the intermetallic dielectric material. The SiCOH films were investigated to study the relations between dielectric constants and chemical structures by using Fourier transform infrared spectroscopy. The formation of pores inside the SiCOH films was studied through the relation between Si-O-Si peaks, including network, suboxide and cage peaks, and the dielectric constant.
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http://dx.doi.org/10.1166/jnn.2019.17028 | DOI Listing |
Nat Commun
December 2024
Department of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice University, Houston, TX, 77005, USA.
As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc.
View Article and Find Full Text PDFMaterials (Basel)
June 2023
Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.
As semiconductor chips have been integrated to enhance their performance, a low-dielectric-constant material, SiCOH, with a relative dielectric constant ≤ 3.5 has been widely used as an intermetal dielectric (IMD) material in multilevel interconnects to reduce the resistance-capacitance delay. Plasma-polymerized tetrakis(trimethylsilyoxy)silane (ppTTMSS) films were created using capacitively coupled plasma-enhanced chemical vapor deposition with deposition plasma powers ranging from 20 to 60 W and then etched in CF/O plasma using reactive ion etching.
View Article and Find Full Text PDFACS Appl Mater Interfaces
April 2022
Department of Chemistry & Biochemistry, University of California, San Diego, La Jolla California 92093, United States.
Highly selective and smooth TiO/AlO and HfO/AlO nanolaminates were deposited by water-free pulsed chemical vapor deposition (CVD) at 300 °C using titanium isopropoxide (Ti(OPr)) and hafnium tertbutoxide (Hf(OBu)) with trimethylaluminum (TMA). TMA was found to be the key factor for enhancing nucleation selectivity on SiO or Si versus SiCOH (hydrophobic, nonporous low dielectric). With precise dosing of TMA, selective nucleation of TiO/AlO and HfO/AlO nanolaminates was achieved and smoother films were formed with higher selectivity compared to single precursor TiO and HfO CVD.
View Article and Find Full Text PDFMaterials (Basel)
April 2021
Micro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-ro, Yeonsu-gu, Incheon 406840, Korea.
This paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to thermo-mechanical instability mechanisms common to conventional SiCOH dielectric thin films without forgoing an ultralow dielectric constant (i.e.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
August 2021
Department of Physics, Hankuk University of Foreign Studies, Yongin, 17035, Republic of Korea.
We have fabricated porous plasma polymerized SiCOH (ppSiCOH) films with low-dielectric constants (low-, less than 2.9), by applying dual radio frequency plasma in inductively coupled plasma chemical vapor deposition (ICP-CVD) system. We varied the power of the low radio frequency (LF) of 370 kHz from 0 to 65 W, while fixing the power of the radio frequency (RF) of 13.
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