The severe interface charge recombination caused by the large energy difference between perovskite material and carbon electrode significantly limits the further performance improvement of the all-inorganic perovskite solar cells (PSCs). We apply innovatively multilayer of quaternary Ag-In-Ga-S (AIGS) quantum dots (QDs) with cascade-like valence bands as hole-transport materials to assemble all-inorganic PSCs, and the resultant all-inorganic PSCs exhibit a power conversion efficiency (PCE) of 8.46%, which is enhanced by 20.9% in comparison with 7% for the pristine device. The high performance of the PSCs indicates that sequential layers of AIGS QDs with cascade-like energy levels can facilitate the charge separation, reduce the barrier the holes crossing and suppress the charge recombination. Stack of QDs with cascade-like energy levels provide solution-processed PSCs with a new method to enhance device performance.
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http://dx.doi.org/10.1016/j.jcis.2019.04.052 | DOI Listing |
J Colloid Interface Sci
August 2019
Jiangxi Engineering Laboratory for Optoelectronics Testing Technology, Nanchang Hangkong University, Nanchang 330063, PR China; School of Physics Science and Technology, Lingnan Normal University, Zhanjiang 524048, PR China. Electronic address:
The severe interface charge recombination caused by the large energy difference between perovskite material and carbon electrode significantly limits the further performance improvement of the all-inorganic perovskite solar cells (PSCs). We apply innovatively multilayer of quaternary Ag-In-Ga-S (AIGS) quantum dots (QDs) with cascade-like valence bands as hole-transport materials to assemble all-inorganic PSCs, and the resultant all-inorganic PSCs exhibit a power conversion efficiency (PCE) of 8.46%, which is enhanced by 20.
View Article and Find Full Text PDFChemphyschem
October 2017
Graduate School of Science and Engineering, Kindai University, 3-4-1, Kowakae, Higashi-Osaka, Osaka, 577-8502, Japan.
A major challenge in chemistry for the synthesis of hetero-nanostructures is to build up atomically commensurate interfaces for smooth interfacial charge transfer. Photodeposition of CdSe on a CdS-preloaded mesoporous TiO nanocrystalline film yields CdS(core)-CdSe(shell) quantum dots (CdS@CdSe/mp-TiO ) with a heteroepitaxial nanojunction at 298 K. Two-electrode quantum-dot-sensitized photoelectrochemical (QD-SPEC) cells with the structure photoanode |0.
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