Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6511052 | PMC |
| http://dx.doi.org/10.1073/pnas.1820890116 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Layer-dependent evolution of electronic structures and correlations in rhombohedral multilayer graphene.
Nat Nanotechnol
November 2024
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, China.
Article Synopsis
- Recent research on trilayer rhombohedral graphene (RG) reveals its potential for studying strong correlation electronic phenomena due to observed superconductivity and magnetism.
- The study uncovers layer-dependent electronic structures in RG multilayers ranging from 3 to 9 layers, highlighting enhanced low-energy flat bands and varying interlayer interactions at liquid nitrogen temperatures.
- Findings show significant splittings of these flat bands, indicating the emergence of strongly correlated states, with the strongest correlations found in six-layer RG, validating theoretical predictions and suggesting RG as a promising platform for further research.
Suppression of symmetry-breaking correlated insulators in a rhombohedral trilayer graphene superlattice.
Nat Commun
November 2024
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China.
Counterintuitive temperature dependence of isospin flavor polarization has recently been found in twisted bilayer graphene, where unpolarized electrons in a Fermi liquid become a spin-valley polarized insulator upon heating. So far, the effect has been limited to v = +/-1 (one electron/hole per superlattice cell), leaving open questions such as whether it is a general property of symmetry-breaking electronic phases. Here, by studying a rhombohedral trilayer graphene/boron nitride moiré superlattice, we report that at v = -3 a resistive peak emerges at elevated temperatures or in parallel magnetic fields.
View Article and Find Full Text PDFUnconventional Discontinuous Transitions in Isospin Systems.
Phys Rev Lett
October 2024
School of Physics and Astronomy and William I. Fine Theoretical Physics Institute, University of Minnesota, Minneapolis, Minnesota 55455, USA.
We show that two-dimensional fermions with dispersion k^{2} or k^{4} undergo a first-order Stoner transition to a fully spin-polarized state despite the fact that the spin susceptibility diverges at the critical point. We extend our analysis to systems with dispersion k^{2α} and spin and valley isospin and show that there is a cascade of instabilities into fractional-metal states with some electron bands fully depleted; narrow intermediate ranges of partially depleted bands exist for α<1 or α>2. The susceptibility becomes large near each transition.
View Article and Find Full Text PDFUniversality of quantum phase transitions in the integer and fractional quantum Hall regimes.
Nat Commun
October 2024
Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
Article Synopsis
- Fractional quantum Hall (FQH) phases involve strong electronic interactions producing anyonic quasiparticles with unique properties, while integer quantum Hall (IQH) effects arise from the band topology of non-interacting electrons.* -
- Our research reveals unexpected "super-universality" in the critical behavior of FQH and IQH transitions, where both types exhibit the same critical scaling exponent (κ = 0.41 ± 0.02) and localization length exponent (γ = 2.4 ± 0.2).* -
- Using ultra-high mobility trilayer graphene devices, we demonstrate that these consistent critical exponents can be observed with short-range disorder, unlike previous studies that showed variability in conventional
Humidity Sensing Properties of Different Atomic Layers of Graphene on the SiO/Si Substrate.
ACS Appl Mater Interfaces
October 2024
Advanced Research Institute for Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China.
Graphene has great potential to be used for humidity sensing due to its ultrahigh surface area and conductivity. However, the impact of different atomic layers of graphene on the SiO/Si substrate on humidity sensing has not been studied yet. In this paper, we fabricated three types of humidity sensors on the SiO/Si substrate based on one to three atomic layers of graphene, in which the sensing areas of graphene are 75 μm × 72 μm and 45 μm × 72 μm, respectively.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!