We present simulations of quantum transport in graphene junctions (Js) in which moiré superlattice potentials are incorporated to demonstrate the interplay between Js and moiré superlattice potentials. It is shown that the longitudinal and Hall resistivity maps can be strongly modulated by the J profile, junction height, and moiré potentials. Device resistance measurements are subsequently performed on graphene/hexagonal- boron-nitride heterostructure samples with accurate alignment of crystallographic orientations to complement and support the simulation results.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6463535 | PMC |
| http://dx.doi.org/10.1103/PhysRevB.98.045412 | DOI Listing |
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