Room-temperature ferroelectricity in MoTe down to the atomic monolayer limit.

Ferroelectrics allow for a wide range of intriguing applications. However, maintaining ferroelectricity has been hampered by intrinsic depolarization effects. Here, by combining first-principles calculations and experimental studies, we report on the discovery of robust room-temperature out-of-plane ferroelectricity which is realized in the thinnest monolayer MoTe with unexploited distorted 1T (d1T) phase. The origin of the ferroelectricity in d1T-MoTe results from the spontaneous symmetry breaking due to the relative atomic displacements of Mo atoms and Te atoms. Furthermore, a large ON/OFF resistance ratio is achieved in ferroelectric devices composed of MoTe-based van der Waals heterostructure. Our work demonstrates that ferroelectricity can exist in two-dimensional layered material down to the atomic monolayer limit, which can result in new functionalities and achieve unexpected applications in atomic-scale electronic devices.