Controlling the electronic properties of oxides that feature a metal-insulator transition (MIT) is a key requirement for developing a new class of electronics often referred to as "Mottronics." A simple, controllable method to switch the MIT properties in real time is needed for practical applications. Here we report a giant, nonvolatile resistive switching (ΔR/R > 1,000%) and strong modulation of the MIT temperature (ΔT > 30 K) in a voltage-actuated VO/PMN-PT [Pb(Mg,Nb)O-PbTiO] heterostructure. This resistive switching is an order of magnitude larger than ever encountered in any other similar systems. The control of the VO electronic properties is achieved using the transfer of switchable ferroelastic strain from the PMN-PT substrate into the epitaxially grown VO film. Strain can reversibly promote/hinder the structural phase transition in the VO, thus advancing/suppressing the associated MIT. The giant resistive switching and strong T modulation could enable practical implementations of voltage-controlled Mott devices and provide a platform for exploring fundamental electronic properties of VO.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6500152 | PMC |
| http://dx.doi.org/10.1073/pnas.1822138116 | DOI Listing |
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