An artificial neural network was utilized in the behavior inference of a random crossbar array (10 × 9 or 28 × 27 in size) of nonvolatile binary resistance-switches (in a high resistance state (HRS) or low resistance state (LRS)) in response to a randomly applied voltage array. The employed artificial neural network was a multilayer perceptron (MLP) with leaky rectified linear units. This MLP was trained with 500,000 or 1,000,000 examples. For each example, an input vector consisted of the distribution of resistance states (HRS or LRS) over a crossbar array plus an applied voltage array. That is, for a × array where voltages are applied to its rows, the input vector was × ( + 1) long. The calculated (correct) current array for each random crossbar array was used as data labels for supervised learning. This attempt was successful such that the correlation coefficient between inferred and correct currents reached 0.9995 for the larger crossbar array. This result highlights MLP that leverages its versatility to capture the quantitative linkage between input and output across the highly nonlinear crossbar array.
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http://dx.doi.org/10.3390/mi10040219 | DOI Listing |
Nat Commun
January 2025
Institute of Theoretical Computer Science, Graz University of Technology, Graz, Austria.
Recent experimental studies in the awake brain have identified a rule for synaptic plasticity that is instrumental for the instantaneous creation of memory traces in area CA1 of the mammalian brain: Behavioral Time scale Synaptic Plasticity. This one-shot learning rule differs in five essential aspects from previously considered plasticity mechanisms. We introduce a transparent model for the core function of this learning rule and establish a theory that enables a principled understanding of the system of memory traces that it creates.
View Article and Find Full Text PDFSci Rep
December 2024
Department of Physics, Indian Institute of Technology, Patna, 801106, Bihar, India.
A highly effective method for creating a supramolecular metallogel of Ni(II) ions (NiA-TA) has been developed in our work. This approach uses benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. Rheological studies assessed the mechanical properties of the Ni(II)-metallogel, revealing its angular frequency response and thixotropic behaviour.
View Article and Find Full Text PDFACS Nano
December 2024
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea.
Physical unclonable functions (PUFs), often referred to as digital fingerprints, are emerging as critical elements in enhancing hardware security and encryption. While significant progress has been made in developing optical and memory-based PUFs, integrating reconfigurability with sensitivity to circularly polarized light (CPL) remains largely unexplored. Here, we present a chiroptical synaptic memristor (CSM) as a reconfigurable PUF, leveraging a two-dimensional organic-inorganic halide chiral perovskite.
View Article and Find Full Text PDFACS Energy Lett
December 2024
Center for Nanophotonics, AMOLF, 1098 XG Amsterdam, The Netherlands.
The efficient conduction of mobile ions in halide perovskites is highly promising for artificial synapses (or memristive devices), devices with a conductivity that can be varied by applying a bias voltage. Here we address the challenge of downscaling halide perovskite-based artificial synapses to achieve low energy consumption and allow high-density integration. We fabricate halide perovskite artificial synapses in a back-contacted architecture to achieve microscale devices despite the high solubility of halide perovskites in polar solvents that are commonly used in lithography.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2024
Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia.
This paper presents the results of experimental studies of the influence of high-frequency magnetron sputtering power on the structural and electrophysical properties of nanocrystalline ZnO films. It is shown that at a magnetron sputtering power of 75 W in an argon atmosphere at room temperature, ZnO films have a relatively smooth surface and a uniform nanocrystalline structure. Based on the results obtained, the formation and study of resistive switching of transparent ITO/ZnO/ITO memristor structures as well as a crossbar array based on them were performed.
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