AI Article Synopsis
- An analytical growth model explains how varying antimony fractional flux affects the morphology of catalyst-free InAs Sb semiconductor nanowires.
- Increasing the Sb fractional flux leads to more radial growth and less axial growth, creating formations known as 'nano-disks'.
- This phenomenon is attributed to the diffusion of indium adatoms along the surfaces of the nanowires.
Article Abstract
An analytical growth model is presented to explain the influence of antimony fractional flux on the morphology evolution of catalyst-free InAs Sb semiconductor nanowires grown by the selective-area vapor-solid mechanism on a Si (111) substrate by molecular beam epitaxy. Increasing Sb fractional flux promoted radial growth and suppressed axial growth, resulting in 'nano-disks'. This behavior is explained by a model of indium adatom diffusion along nanowire facets.
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| http://dx.doi.org/10.1088/1361-6528/ab1375 | DOI Listing |
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