The substitutional doping method is ideally suited to generating doped two-dimensional (2D) materials for practical device applications as it does not damage or destabilize such materials. However, recently reported substitutional doping techniques for 2D materials have given rise to discontinuities and low uniformities, which hamper the extension of such techniques to large-scale production. In the current work, we demonstrated uniform substitutional doping of monolayer MoS in a 2 in. wafer of area >13 cm. The devices based on doped MoS showed extremely high uniformity and stability in electrical properties in ambient conditions for 30 days. The photodetectors based on the doped MoS samples showed an ultrahigh photoresponsivity of 5 × 10 A/W, a detectivity of 5 × 10 Jones, and a fast response rate of 5 ms than did those based on undoped MoS. This work showed the feasibility of real-life applications based on functionalized 2D semiconductors for next-generation electronic and optoelectronic devices.
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