In this work, Ru-based RRAM devices with atomic layer deposited AlO/HfO functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6411786PMC
http://dx.doi.org/10.1186/s11671-019-2885-2DOI Listing

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