During conventional nanoindentation measurements, the indentation depths are usually larger than 1-10 nm, which hinders the ability to study ultra-thin films (<10 nm) and supported atomically thin two-dimensional (2D) materials. Here, we discuss the development of modulated Å-indentation to achieve sub-Å indentations depths during force-indentation measurements while also imaging materials with nanoscale resolution. Modulated nanoindentation (MoNI) was originally invented to measure the radial elasticity of multi-walled nanotubes. Now, by using extremely small amplitude oscillations (<<1 Å) at high frequency, and stiff cantilevers, we show how modulated nano/Å-indentation (MoNI/ÅI) enables non-destructive measurements of the contact stiffness and indentation modulus of ultra-thin ultra-stiff films, including CVD diamond films (~1000 GPa stiffness), as well as the transverse modulus of 2D materials. Our analysis demonstrates that in presence of a standard laboratory noise floor, the signal to noise ratio of MoNI/ÅI implemented with a commercial atomic force microscope (AFM) is such that a dynamic range of 80 dB -- achievable with commercial Lock-in amplifiers -- is sufficient to observe superior indentation curves, having indentation depths as small as 0.3 Å, resolution in indentation <0.05 Å, and in normal load <0.5 nN. Being implemented on a standard AFM, this method has the potential for a broad applicability.
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http://dx.doi.org/10.1038/s41598-019-40636-0 | DOI Listing |
Materials (Basel)
January 2025
Department of Chemistry, Lomonosov Moscow State University, Moscow 119991, Russia.
We have proposed and developed a method for measuring the thermal conductivity of highly efficient thermal conductors. The measurement method was tested on pure metals with high thermal conductivity coefficients: aluminum (99.999 wt.
View Article and Find Full Text PDFNanotechnology
January 2025
University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520-IEMN, F-59000 Lille, France.
InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)substrates with molecular beam epitaxy. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be grown using a very high Sb/In flux ratio.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Shanghai Key Laboratory of Functional Materials Chemistry, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, China.
Currently, the development of polymeric hole-transporting materials (HTMs) lags behind that of small-molecule HTMs in inverted perovskite solar cells (PSCs). A critical challenge is that conventional polymeric HTMs are incapable of forming ultra-thin and conformal coatings like self-assembly monolayers (SAMs), especially for substrates with rough surface morphology. Herein, we address this challenge by designing anchorable polymeric HTMs (CP1 to CP5).
View Article and Find Full Text PDFLight Sci Appl
January 2025
Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
We propose and demonstrate a data-driven plasmonic metascreen that efficiently absorbs incident light over a wide spectral range in an ultra-thin silicon film. By embedding a double-nanoring silver array within a 20 nm ultrathin amorphous silicon (a-Si) layer, we achieve a significant enhancement of light absorption. This enhancement arises from the interaction between the resonant cavity modes and localized plasmonic modes, requiring precise tuning of plasmon resonances to match the absorption region of the silicon active layer.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China.
High-performance acoustic resonators based on single-crystalline piezoelectric thin films have great potential in wireless communication applications. This paper presents the modeling, fabrication, and characterization of laterally excited bulk resonators (XBARs) utilizing the suspended ultra-thin (~420 nm) LiTaO (LT, with 42° YX-cut) film. The finite element analysis (FEA) was performed to model the LT-based XBARs precisely and to gain further insight into the physical behaviors of the acoustic waves and the loss mechanisms.
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